Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-06-26
1986-05-06
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29576E, 29576J, 29590, 29591, 148171, 148175, 148174, 148 15, 148DIG19, 148DIG123, 148DIG126, H01L 2174, H01L 2178, H01L 2180, H01L 2994
Patent
active
045862400
ABSTRACT:
A vertical IGFET comprising a substantially planar silicon wafer with a source electrode on one major surface and a drain electrode on the opposite major surface is disclosed. An insulated gate electrode, which includes a conductive finger portion surrounded by an insulating layer, is internally disposed in the silicon wafer such that a predetermined voltage applied to the gate electrode will regulate a current flow between the source and drain electrodes. The device is fabricated utilizing an epitaxial lateral overgrowth technique for depositing monocrystalline silicon over the insulated gate which is disposed on a silicon substrate.
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Blackstone Scott C.
Corboy, Jr. John F.
Jastrzebski Lubomir L.
Cohen Donald S.
Glick Kenneth R.
Hearn Brian E.
Morris Birgit E.
Quach Tuan N.
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