Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1994-09-20
1996-06-04
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257 96, 257 97, 257103, H01L 310312, H01L 3300
Patent
active
055235891
ABSTRACT:
A light emitting diode emits in the blue portion of the visible spectrum and is characterized by an extended lifetime. The light emitting diode comprises a conductive silicon carbide substrate; an ohmic contact to the silicon carbide substrate; a conductive buffer layer on the substrate and selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A.sub.x B.sub.1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides; and a double heterostructure including a p-n junction on the buffer layer in which the active and heterostructure layers are selected from the group consisting of binary Group III nitrides and ternary Group III nitrides.
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Bulman Gary E.
Dmitriev Vladimir
Edmond John A.
Kong Hua-Shuang
Cree Research Inc.
Ngo Ngan V.
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