Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-13
2008-05-13
Geyer, Scott B. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C257SE27091, C257SE29201
Reexamination Certificate
active
11016713
ABSTRACT:
A source region is formed by performing ion implantation plural times to diffuse an impurity from the upper surface of a semiconductor region toward a region far dawn therefrom and to increase impurity concentration in the vicinity of the upper surface of the semiconductor region, whereby the source region and a gate electrode are overlapped with each other surely. Thus, offset between the gate and the source is prevented and an excellent ohmic contact is formed between a source electrode and the source region.
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Miyata Satoe
Mizokuchi Shuji
Geyer Scott B.
McDermott Will & Emery LLP
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