Vertical gate semiconductor device and method for...

Details Vertical gate semiconductor device and method for... Vertical gate semiconductor device and method for...

2007-03-06

2007-03-06

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257SE29262

Reexamination Certificate

active

10962573

ABSTRACT:
A first region11functioning as a transistor includes a drain region111, a body region112formed over the drain region111, a source region113A formed over the body region112and a trench formed through the body region112and having a gate electrode120buried therein. A source region113B is formed over the body region112extending in a second region12.

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