Vertical gate device for an image sensor and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE27133

Reexamination Certificate

active

07667250

ABSTRACT:
A CMOS pixel cell having a charge transfer transistor adjacent the photo-conversion device. The transistor has a channel region surrounded by a gate and an upper source/drain region over the channel region.

REFERENCES:
patent: 6027975 (2000-02-01), Hergenrother et al.
patent: 6225661 (2001-05-01), An et al.
patent: 6300199 (2001-10-01), Reinberg
patent: 6320221 (2001-11-01), Choi et al.
patent: 6372559 (2002-04-01), Crowder et al.
patent: 6518622 (2003-02-01), Chew et al.
patent: 6521924 (2003-02-01), Han et al.
patent: 6548872 (2003-04-01), Reinberg
patent: 6635924 (2003-10-01), Hergenrother et al.
patent: 6661459 (2003-12-01), Koizumi et al.
patent: 6664143 (2003-12-01), Zhang
patent: 6686604 (2004-02-01), Layman et al.
patent: 6690040 (2004-02-01), Chaudhry et al.
patent: 6794699 (2004-09-01), Bissey et al.
patent: 6906364 (2005-06-01), Chen et al.
patent: 2002/0060338 (2002-05-01), Zhang
patent: 2003/0047749 (2003-03-01), Chaudhry et al.
patent: 2003/0060015 (2003-03-01), Layman et al.
patent: 2003/0064567 (2003-04-01), Chaudhry et al.
patent: 2003/0119237 (2003-06-01), Chittipeddi et al.
patent: 2003/0136978 (2003-07-01), Takaura et al.
patent: 2004/0041188 (2004-03-01), Bissey et al.
patent: 2004/0065808 (2004-04-01), Kochi et al.
patent: 2005/0208769 (2005-09-01), Sharma
patent: 07297406 (1995-11-01), None
Hergenrother, J. M. et al.—“The Vertical Replacement-Gate (VRG) MOSFET: A 50-nm Vertical MOSFET with Lithography-Independent Gate Length,” proceedings of the IEDM, Dec. 20, pp. 65-68.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Vertical gate device for an image sensor and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical gate device for an image sensor and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical gate device for an image sensor and method of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4224787

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.