Vertical GaN-based LED and method of manufacturing the same

Details Vertical GaN-based LED and method of manufacturing the same Vertical GaN-based LED and method of manufacturing the same

2006-07-21

2008-10-14

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S088000, C257S093000, C257S099000, C257S101000, C257SE25032

Reexamination Certificate

active

07436001

ABSTRACT:
A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.

REFERENCES:
patent: 5779924 (1998-07-01), Krames et al.
patent: 6559467 (2003-05-01), Nikolaev et al.
patent: 2003/0222263 (2003-12-01), Choi
patent: 2004/0119082 (2004-06-01), Sugawara

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