Vertical gallium-nitride based light emitting diode

Details Vertical gallium-nitride based light emitting diode Vertical gallium-nitride based light emitting diode

2006-12-06

2009-08-11

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S080000, C257S081000, C438S022000, C438S069000

Reexamination Certificate

active

07573076

ABSTRACT:
A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.

REFERENCES:
patent: 4854975 (1989-08-01), Krause
patent: 2003/0116770 (2003-06-01), Chang et al.
patent: 2007/0114564 (2007-05-01), Lee et al.
patent: 08-116088 (1996-05-01), None
patent: 2001-168390 (2001-06-01), None

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