Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-03
2010-02-16
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257SE21410, C438S156000, C438S149000, C365S182000
Reexamination Certificate
active
07663188
ABSTRACT:
A semiconductor device includes a tube-type channel formed over a semiconductor substrate. The tube-type channel is connected to first and second conductive lines. A bias electrode is formed in the tube-type channel. The bias electrode is connected to the semiconductor substrate. An insulating film is disposed between the tube-type channel and the bias electrode. A surrounding gate electrode is formed over the tube-type channel.
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Shino, Tomoaki, et al., “Floating Body RAM Technology and its Scalability to 32nm Node and Beyond”, IEEE, (2006).
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Okhonin, S., et al., “A SOI Capacitor-less 1T-DRAM Concept”, 2001 IEEE SOI Conference, Oct. 2001;153-154.
Hynix / Semiconductor Inc.
Nguyen Thinh T
Townsend and Townsend / and Crew LLP
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