Vertical floating body cell of a semiconductor device and...

Details Vertical floating body cell of a semiconductor device and... Vertical floating body cell of a semiconductor device and...

2011-05-17

2011-05-17

Nguyen, Thinh T (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S137000, C438S138000, C438S151000, C257S347000, C257S395000

Reexamination Certificate

active

07943444

ABSTRACT:
A semiconductor device includes a tube-type channel formed over a semiconductor substrate. The tube-type channel is connected to first and second conductive lines. A bias electrode is formed in the tube-type channel. The bias electrode is connected to the semiconductor substrate. An insulating film is disposed between the tube-type channel and the bias electrode. A surrounding gate electrode is formed over the tube-type channel.

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Okhonin, S., et al., “A SOI Capacitor-less 1T-DRAM Concept”, 2001 IEEE SOI Conference, Oct. 2001; 153-154.

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