Vertical field effect transistor with diffused protection diode

Details Vertical field effect transistor with diffused protection diode Vertical field effect transistor with diffused protection diode

1991-09-19

1994-05-17

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257365, 257394, 257409, H01L 2910, H01L 2934

Patent

active

053130880

ABSTRACT:
A vertical field effect transistor of the structure having a gate pad and a gate finger, includes a semiconductor substrate of a first conduction type, and a first diffusion region of a second conduction type opposite to the first conduction type, formed in a principal surface of the substrate under the gate pad and the gate finger. A second diffusion region of the second conduction type is formed in the principal surface of the substrate and electrically connected to a source electrode so as to form a protection diode between the substrate and the second diffusion region. The second diffusion region is separated from the first diffusion region.

REFERENCES:
patent: 4414560 (1983-11-01), Lidow
patent: 4789882 (1988-12-01), Lidow
patent: 5162883 (1992-11-01), Fujihira
patent: 5169793 (1992-12-01), Okabe et al.

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