Vertical field effect transistor with a trench structure

Details Vertical field effect transistor with a trench structure Vertical field effect transistor with a trench structure

1995-05-24

1996-08-27

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257334, 257382, H01L 2976, H01L 2994, H01L 31062

Patent

active

055503969

ABSTRACT:
A polycrystalline silicon film which is to be a channel is in a trench provided in a main surface of a silicon substrate. A gate insulating film is on the periphery of a polycrystalline silicon film. A gate electrode is on the periphery of the gate insulating film. A silicon oxide film is on the periphery of the gate electrode. A source/drain film is on the periphery of the silicon oxide film. A silicon oxide film is on the periphery of the source/drain film. A source/drain film is electrically connected to the polycrystalline silicon film. A source/drain film is electrically connected to the polycrystalline silicon film. Since the polycrystalline silicon film extends along the depth direction of trench, a channel length can be sufficient to prevent a short channel effect. Also, compared to the case in which an epitaxial layer is used as a channel, since the polycrystalline silicon film is used as a channel, the time required for manufacturing the device can be shortened.

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R. Eklung et al., "A 0.5.mu.mBiCMOS Technology for Logic and 4Mbit-class SRAM's", Semiconductor Process and Design Center, 16.4.1-16.4.4, IEDM 89-425-IEDM 89-428, CH2637-7/89/0000-0425, 1989 IEEE.
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