Vertical field-effect transistor in source-down structure

Details Vertical field-effect transistor in source-down structure Vertical field-effect transistor in source-down structure

2005-09-22

2008-05-20

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S331000, C257S329000, C257S332000, C438S268000, C438S270000, C438S272000

Reexamination Certificate

active

07375395

ABSTRACT:
The invention relates to a vertical field-effect transistor in source-down structure, in which the active zones (10, 7, 11) are introduced from trenches (5, 8, 9) into a semiconductor body (1), a source electrode (18) being connected via the filling (6) of a body trench (5) to a highly doped substrate (2) via a conductive connection (15).

REFERENCES:
patent: 6284604 (2001-09-01), Tihanyi
patent: 6373097 (2002-04-01), Werner
patent: 2004/0089896 (2004-05-01), Sakakibara
patent: 102 49 633 (2004-05-01), None
patent: 0 440 394 (1991-01-01), None

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