Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-01-06
1996-04-02
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257302, 257330, 257344, 257408, H01L 2976, H01L 27108, H01L 2994, H01L 31062
Patent
active
055043593
ABSTRACT:
This is a vertical MOSFET device with low gate to source overlap capacitance. It can comprise a semiconductor substrate 22 of the first conductivity type, a source region 24,26 of a second conductivity type formed in the upper surface of the substrate 22; a vertical pillar with a channel region 28 of the first conductivity type, a lightly doped drain region 30 of the second conductivity type and a highly doped drain contact region 32 of the second conductivity type; a gate insulator 34, a gate electrode 36 surrounding the vertical pillar, and an insulating spacer 38 between the source 24,26 and a portion of the gate 36 regions. This is also a method of forming a vertical MOSFET device on a single crystal semiconductor substrate, with the device having a pillar on the substrate, with the pillar having a channel region in a lower portion and with the channel region having a top and a highly doped first source/drain region in an upper portion of the pillar, with the substrate having a highly doped second source/drain region and with a gate insulator on the substrate and on the pillar. The method comprises: isotropically forming a first gate electrode material layer on the pillar and the substrate; anisotropically etching the first gate electrode material leaving a vertical portion of gate electrode material on the pillar; anisotropically depositing an insulating spacer; and conformally depositing a second gate electrode material layer.
REFERENCES:
patent: 4954854 (1990-09-01), Dhong et al.
patent: 5001526 (1991-03-01), Gotou
patent: 5047812 (1991-09-01), Pfiester
patent: 5057896 (1991-10-01), Gotou
patent: 5060029 (1991-10-01), Nishizawa et al.
patent: 5073519 (1991-12-01), Rodder
Semiconductor Devices-Physics and Technology, Jan. 1985, by S. M. Sze, p. 362.
Burton Dana L.
Donaldson Richard L.
Kesterson James C.
Loke Steven H.
Texas Instruments Incorporated
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