Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2007-05-01
2007-05-01
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S723000, C257S777000, C257S786000
Reexamination Certificate
active
10390178
ABSTRACT:
In a memory and/or data processing device having at least two stacked layers which are supported by a substrate or forming a sandwiched self-supporting structure, wherein the layers include memory and/or processing circuitry with mutual connections between the layers and/or to circuitry in the substrate, the layers the are mutually arranged such that contiguous layers form a staggered structure on at least one edge of the device and at least one electrical edge conductor is provided passing over the edge on one layer and down one step at a time, enabling the connection to an electrical conductor in any of the following layers in the stack. A method for manufacturing a device of this kind includes the steps for adding the layers successively, one layer at a time, such that the layers form a staggered structure, and for providing one or more layers with at least one electrical contact pad for linking to one or more interlayer edge connectors.
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Carlsson Johan
Gudesen Hans Gude
Gustafsson Göran
Leidstad Geirr Ivarsson
Nordal Per-Erik
Jacobson & Holman PLLC
Nguyen Dilinh
Pham Hoai
Thin Film Electronics ASA
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