Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-08-16
2000-11-28
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257304, H01L 2978, H01L 3300
Patent
active
061539023
ABSTRACT:
A dynamic random access memory (DRAM) device. The DRAM device is formed in a substrate having a top surface and a trench with a sidewall formed in the substrate. A signal storage node is formed using a bottom portion of the trench and a signal transfer device is formed using an upper portion of the trench. The signal transfer device includes a first diffusion region coupled to the signal storage node and extending from the sidewall of the trench into the substrate, a second diffusion region formed in the substrate adjacent to the top surface of the substrate and adjacent the sidewall of the trench, a channel region extending along the sidewall of the trench between the first diffusion region and the second diffusion region, a gate insulator formed along the sidewall of the trench extending from the first diffusion region to the second diffusion region, a gate conductor filling the trench and having a top surface, and a wordline having a bottom adjacent the top surface of the gate conductor and a side aligned with the sidewall of the trench.
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Furukawa Toshiharu
Gruening Ulrike
Horak David V.
Mandelman Jack A.
Radens Carl J.
International Business Machines - Corporation
Meier Stephen D.
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