Vertical double-diffusion metal-oxide-semiconductor...

Details Vertical double-diffusion metal-oxide-semiconductor... Vertical double-diffusion metal-oxide-semiconductor...

2008-04-15

2009-06-23

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S336000, C257SE29258

Reexamination Certificate

active

07550803

ABSTRACT:
A vertical double-diffusion metal-oxide-semiconductor (VDMOS) transistor device includes a first conductive type semiconductor substrate, a gate structure formed in a first trench in the first conductive type semiconductor substrate, a first conductive type well surrounding the gate structure, a source region adjacent to the gate structure formed in the first conductive type well, a drain region surrounding the source region, and a trench isolation structure formed in a second trench between the source region and the drain region.

REFERENCES:
patent: 5723891 (1998-03-01), Malhi
patent: 7352036 (2008-04-01), Grebs et al.
patent: 2007/0164353 (2007-07-01), Mifuji et al.
patent: 2008/0128801 (2008-06-01), Izumi

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