Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2005-03-15
2005-03-15
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S288000
Reexamination Certificate
active
06867476
ABSTRACT:
In a DMOS device, a drift region is located over a substrate and is lightly doped with impurities of a first conductivity type. A plurality of body areas are located in the drift region and doped with impurities of a second conductivity type which is opposite the first conductivity type. A plurality of source areas are respectively located in the body areas and heavily doped with impurities of the first conductivity type. A plurality of bulk areas are respectively located adjacent the source areas and in the body areas, and are heavily doped with impurities of the second conductivity type. A well region partially surrounds the body areas collectively and is doped with impurities of the first conductivity.
REFERENCES:
patent: 5488236 (1996-01-01), Baliga et al.
patent: 5945709 (1999-08-01), Williams et al.
patent: 6239463 (2001-05-01), Williams et al.
patent: 6586801 (2003-07-01), Onishi et al.
patent: 1999-0066314 (1999-08-01), None
patent: 000000936 (2000-01-01), None
Nhu David
Samsung Electronics Co. LTD
Volentine Francos & Whitt PLLC
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