Vertical diode formation in SOI application

Details Vertical diode formation in SOI application Vertical diode formation in SOI application

2007-03-06

2007-03-06

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S311000, C257S347000, C257S368000, C257S173000

Reexamination Certificate

active

11158022

ABSTRACT:
A method for making a semiconductor device is provided. The method comprises (a) providing a semiconductor stack comprising a semiconductor substrate (203), a first semiconductor layer (205), and a first dielectric layer (207) disposed between the substrate and the first semiconductor layer; (b) forming a first trench in the first dielectric layer which exposes a portion of the substrate; (c) forming a first doped region (209) in the exposed portion of the substrate; and (d) forming anode (211) and cathode (213) regions in the first implant region.

REFERENCES:
patent: 6500723 (2002-12-01), Khazhinsky et al.
patent: 6653670 (2003-11-01), Ker et al.
patent: 2003/0089948 (2003-05-01), Min
Salman, A. et al., ESD Protection for SOI Technology using an Under-The-Box (Substrate) Diode Structure; 2004 EOS/ESD Symposium; 7 pages.

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