Vertical diode and method for manufacturing same and...

Details Vertical diode and method for manufacturing same and... Vertical diode and method for manufacturing same and...

2009-11-12

2011-11-08

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, material with...

C257S065000, C257SE29237, C257SE29003, C257SE29004, C257SE29327, C257SE21090, C438S488000

Reexamination Certificate

active

08053776

ABSTRACT:
In a vertical diode, an N+-type layer, an N−-type layer, and a P+-type layer are stacked in this order on a lower electrode film, and an upper electrode film is provided thereon. The effective impurity concentration of the N−-type layer is lower than the effective impurity concentrations of the N+-type layer and the P+-type layer. At least one of the N+-type layer, the N−-type layer, and the P+-type layer is formed from a small grain size polycrystalline semiconductor whose each crystal grain does not penetrate each layer through its thickness.

REFERENCES:
patent: 4675715 (1987-06-01), Lepselter et al.
patent: 5213628 (1993-05-01), Noguchi et al.
patent: 5441904 (1995-08-01), Kim et al.
patent: 6835632 (2004-12-01), Shimamoto et al.
patent: 2003/0124818 (2003-07-01), Luo et al.
patent: 2005/0224838 (2005-10-01), Tanaka et al.
patent: 2008/0111133 (2008-05-01), Ahn
patent: 2000-232073 (2000-08-01), None
patent: 2002-329641 (2002-11-01), None
patent: 2005-064487 (2005-03-01), None
patent: 2008-085071 (2008-04-01), None

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