Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-06-11
2000-07-18
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257298, 257300, 257301, 257302, 257304, 257305, 438242, 438243, H01L 27108, H01L 2976, H01L 2994, H01L 31119, H01L 218242
Patent
active
060910941
ABSTRACT:
A semiconductor device includes a substrate forming a trench, the trench including a storage node disposed within the trench. A wordline is disposed within the substrate and adjacent to a portion of the substrate. A vertically disposed transistor is included wherein the wordline functions as a gate, the storage node and a bitline function as one of a source and a drain such that when activated by the wordline the transistor conducts between the storage node and the bitline. The invention further includes a method of fabricating the semiconductor device with vertical transistors.
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Hardy David
Paschburg Donald B.
Siemens Aktiengesellschaft
Wilson Allan R.
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