Vertical conducting power semiconducting devices made by...

Details Vertical conducting power semiconducting devices made by... Vertical conducting power semiconducting devices made by...

2007-10-16

2007-10-16

Kebede, Brook (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S302000, C257SE29189

Reexamination Certificate

active

11534310

ABSTRACT:
The Invention Is A Method For Making Power Device On A Semiconductor Wafer, Where The Backside Of The Wafer Has Been Thinned In Selected Regions To A Thickness Of About 25 Um By Reactive Ion Etching.

REFERENCES:
patent: 3928091 (1975-12-01), Tachi et al.
patent: 5162258 (1992-11-01), Lemnios et al.
patent: 5233219 (1993-08-01), Shimoji et al.
patent: 5496755 (1996-03-01), Bayraktaroglu
patent: 5643803 (1997-07-01), Fukada et al.
patent: 5698453 (1997-12-01), Green et al.
patent: 5827755 (1998-10-01), Yonehara et al.
patent: 6081006 (2000-06-01), Nelson
patent: 6096656 (2000-08-01), Matzke et al.

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