Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-31
2006-10-31
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S127000, C257S135000, C257S170000, C257S341000, C257S342000, C257S392000, C257S401000, C257S402000, C257S403000, C257S404000, C257S405000, C257S406000, C257S407000
Reexamination Certificate
active
07129544
ABSTRACT:
In one embodiment, a compound semiconductor vertical FET device (11) includes a first trench (29) formed in a body of semiconductor material (13), and a second trench (34) formed within the first trench (29) to define a channel region (61). A doped gate region (59) is then formed on the sidewalls and the bottom surface of the second trench (34). Source regions (26) are formed on opposite sides of the double trench structure (28). Localized gate contact regions (79) couple individual doped gate regions (59) together. Contacts (84,85,87) are then formed to the localized gate contact regions (79), the source regions (26), and an opposing surface (21) of the body of semiconductor material (13). The structure provides a compound semiconductor vertical FET device (11, 41, 711, 712, 811, 812) having enhanced blocking capability and improved switching performance.
REFERENCES:
patent: 4166223 (1979-08-01), Bluzer
patent: 4559694 (1985-12-01), Yoh et al.
patent: 5493134 (1996-02-01), Mehrotra et al.
patent: 6180966 (2001-01-01), Kohno et al.
patent: 6323518 (2001-11-01), Sakamoto et al.
patent: 6574131 (2003-06-01), Salling
patent: 6710403 (2004-03-01), Sapp
patent: 6713813 (2004-03-01), Marchant
patent: 6930354 (2005-08-01), Shirai et al.
patent: 6930355 (2005-08-01), Matsuki et al.
patent: 6984864 (2006-01-01), Uno et al.
patent: 2002/0056884 (2002-05-01), Baliga
patent: 2002/0175351 (2002-11-01), Baliga
patent: 2003/0151092 (2003-08-01), Chien
patent: 2003/0218920 (2003-11-01), Harari
patent: 2005/0001268 (2005-01-01), Baliga
Jackson Kevin B.
Semiconductor Components Industries L.L.C.
Soward Ida M.
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