Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-16
2005-08-16
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S291000, C348S272000, C348S273000, C348S274000, C348S277000
Reexamination Certificate
active
06930336
ABSTRACT:
A vertical-color-filter detector group comprises a semiconductor body including a plurality of alternating silicon layers of first and second conductivity types, the second conductivity type being opposite that of the first conductivity type, formed over a substrate of the first conductivity type. Each of the layers of the second conductivity type are disposed at a depth from an upper surface of the silicon body selected to preferentially absorb radiation of a selected color, there being at least first and second layers of the second conductivity type. First and second conductive contacts extend, respectively, from the first and second layers of the second conductivity type to the upper surface of the silicon body. A peripheral isolation trench defines a perimeter of the detector group.
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Dickey Thomas L.
Foveon, Inc.
Sierra Patent Group Ltd.
Tran Minhloan
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