Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2010-07-23
2010-12-14
Pham, Hoai v (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257SE27057, C257SE27096
Reexamination Certificate
active
07851842
ABSTRACT:
A method of fabricating a vertical channel transistor for a semiconductor device includes forming, on a substrate, a plurality of active pillars each having a gate electrode formed on and surrounding a lower portion thereof; forming a first insulation layer over the active pillars to fill a gap region between the active pillars; partially removing the first insulation layer to exposes a circumferential surface of the gate electrode in all directions, without exposing the substrate in the gap region between the active pillars; forming a conductive layer on the remaining first insulation layer to fill the gap region between the active pillars; and patterning the conductive layer to form a word line that surrounds and contacts the circumferential surface of the gate electrode in all directions.
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Korean Notice of Allowance for application No. 10-2008-0027425, citing the attached reference(s).
Korean Office Action for application No. 10-2008-0027425, citing the attached reference(s).
Hynix / Semiconductor Inc.
Lowe Hauptman & Ham & Berner, LLP
Pham Hoai v
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