Vertical channel FET with super junction construction

Details Vertical channel FET with super junction construction Vertical channel FET with super junction construction

2008-03-18

2008-03-18

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S508000, C257SE29067, C257SE29260

Reexamination Certificate

active

07345339

ABSTRACT:
A semiconductor device includes a body region, a drift region having a first part and a second part, and a trench gate electrode. The body region is disposed on the drift region. The first and second parts extend in an extending direction so that the second part is adjacent to the first part. The trench gate electrode penetrates the body region and reaches the drift region so that the trench gate electrode faces the body region and the drift region through an insulation layer. The trench gate electrode extends in a direction crossing with the extending direction of the first and second parts. The first part includes a portion near the trench gate electrode, which has an impurity concentration equal to or lower than that of the body region.

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First Office Action issued from the U.S. Patent Office on Jul. 5, 2007 for the related divisional U.S. Appl. No. 11/356,984 (a copy enclosed).

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