Vertical-cavity surface-emitting semiconductor laser device

Details Vertical-cavity surface-emitting semiconductor laser device Vertical-cavity surface-emitting semiconductor laser device

2011-02-08

2011-02-08

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S050100, C372S050110

Reexamination Certificate

active

07885307

ABSTRACT:
A vertical-cavity surface-emitting (VCSEL) device has a layer structure including a top DBR mirror, an active layer, a current confinement oxide layer, and a bottom DBR mirror, the layer structure being configured as a mesa post. The current confinement oxide layer has a central current injection area and a peripheral current blocking area oxidized from the sidewall of the mesa post. The mesa post has a substantially square cross-sectional shape, thereby allowing an oxidation heat treatment to configure a substantially circular current injection area in the current-confinement oxide layer.

REFERENCES:
patent: 5719891 (1998-02-01), Jewell
patent: 5978408 (1999-11-01), Thornton
patent: 2005/0238076 (2005-10-01), Kuwata et al.
patent: 2007/0091965 (2007-04-01), Tanabe et al.
Kent D. Choquette et al “Advances in Selective Wet Oxidation of A1 GaAs Alloys”IEEE Journal of selected topics in quantum electronics, vol. 3, No. 3, June 1997, pp. 916-926.
U.S. Appl. No. 11/554,973, filed Oct. 31, 2006, Hiraiwa, et al.
U.S. Appl. No. 11/551,101, filed Apr. 24, 2008, Iwai, et al.
U.S. Appl. No. 12/166,422, filed Jul. 2, 2008, Hiraiwa et al.
U.S. Appl. No. 11/551,101, filing date Oct. 19, 2006, Tanabe, et al.
U.S. Appl. No. 12/796,225, filing date Jun. 8, 2010, Hiraiwa, et al.

Affiliated with

Also associated with

Rating

Vertical-cavity surface-emitting semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical-cavity surface-emitting semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical-cavity surface-emitting semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2622232