Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-04-12
2005-04-12
Dang, Phuc T. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S037000
Reexamination Certificate
active
06878958
ABSTRACT:
A vertical cavity surface-emitting laser (VCSEL) structure and related fabrication methods are described, the VCSEL comprising amorphous dielectric distributed Bragg reflectors (DBRs) while also being capable of fabrication in a single-growth process. Beginning with a substrate such as InP, a first amorphous dielectric DBR structure is deposited thereon, but is limited in width such that some substrate material remains uncovered by the dielectric material. A lateral overgrowth layer is then formed by epitaxially growing material such as InP onto the substrate, the lateral overgrowth layer eventually burying the dielectric DBR structure as well as the previously-uncovered substrate material. Active layers may then be epitaxially grown on the lateral overgrowth layer, and a top dielectric DBR may be deposited thereon using conventional techniques. To save vertical space between DBRs, the first DBR may be deposited in a non-reentrant well formed in the surface of a substrate. A dual lateral overgrowth method for further reducing dislocations above a lower buried dielectric DBR of a VCSEL is also described.
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Cooper & Dunham LLP
Dang Phuc T.
Gazillion Bits Inc.
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