Vertical cavity surface emitting laser diode and method for...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation

Reexamination Certificate

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C257SE33011, C372S046013

Reexamination Certificate

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10978346

ABSTRACT:
In a vertical cavity surface emitting laser diode manufactured on a non-off-angle substrate with a (100)-oriented plane or the like, anisotropic stress is applied to a central portion of an active layer by forming a asymmetrical oxidation structure in an Al high concentration portion in the mesa, so that polarization controllability of a device can be improved.

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F. Monti di Sopra et al., “Polarization Control in Strained T-bar VCSELs”, IEEE Photonics Technology Letters, vol. 14, No. 8, Aug. 2002, pp. 1034-1036.
Kent D. Choquette, et al., “Control of Vertical-Cavity Laser Polarization with Anisotropic Transverse Cavity Geometries”, IEEE Photonics Technology Letters, vol. 6, No. 1, Jan. 1994, pp. 40-42.
F. Monti di Sopra et al., “Polarization Control in Strained T-bar VCSELs”, IEEE Photonics Technology Letters, vol. 14, No. 8, Aug. 2002, pp. 1034-1036.
Kent D. Choquette, et al., “Control of Vertical-Cavity Laser Polarization with Anisotropic Transverse Cavity Geometries”, IEEE Photonics Technology Letters, vol. 6, No. 1 Jan. 1994, pp.40-42.

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