Vertical-cavity surface-emitting laser and method for manufactur

Details Vertical-cavity surface-emitting laser and method for manufactur Vertical-cavity surface-emitting laser and method for manufactur

1998-09-28

2000-10-03

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 32, H01L 3025

Patent

active

061272000

ABSTRACT:
A vertical-cavity surface-emitting semiconductor laser has first and second semiconductor multi-layered films, an active layer, and third and fourth semiconductor multi-layered films which are piled up on a GaAs substrate in that order. Furthermore, the first film is formed by piling up Al.sub.x-1 Ga.sub.1-x1 As layers (0.ltoreq.x1.ltoreq.1) and Al.sub.x2 Ga.sub.1-x2 As layers (0.ltoreq.x2.ltoreq.1) one after the other by turns. The second film is formed by piling up In.sub.x3 Ga.sub.1-x3 As.sub.y3 P.sub.1-y3 layers (0.ltoreq.x3, y3.ltoreq.1) and In.sub.x4 Ga.sub.1-x4 As.sub.y4 P.sub.1-y4 layers (0.ltoreq.x4, y4.ltoreq.1) one after the other by turns. The active layer is provided as an In.sub.x5 Ga.sub.1-x5 As.sub.y5 P.sub.1-y5 layer (0.ltoreq.x5, y5.ltoreq.1). The third film is formed by piling up In.sub.x6 Ga.sub.1-x6 As.sub.y6 P.sub.1-y6 layers (0.ltoreq.x6, y6.ltoreq.1) and In.sub.x7 Ga.sub.1-x7 As.sub.y7 P.sub.1-y7 layers (0.ltoreq.x7, y7.ltoreq.1) one after the other by turns. The fourth film is formed by piling up Al.sub.x8 Ga.sub.1-x8 As layers (0.ltoreq.x8.ltoreq.1) and Al.sub.x9 Ga.sub.1-x9 As layers (0.ltoreq.x9.ltoreq.1) one after the other by turns. In each film, each layer has a thickness corresponding to a value obtained by dividing an emission wavelength by a refractive index and 4.

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