Vertical-cavity surface-emitting laser and method for manufactur

Details Vertical-cavity surface-emitting laser and method for manufactur Vertical-cavity surface-emitting laser and method for manufactur

1996-12-24

1999-01-26

Lee, John D.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 50, H01S 308

Patent

active

058645756

ABSTRACT:
A vertical-cavity surface-emitting semiconductor laser has first and second semiconductor multi-layered films, an active layer, and third and fourth semiconductor multi-layered films which are piled up on a GaAs substrate in that order. Furthermore, the first film is formed by piling up Al.sub.x1 Ga.sub.1-x1 As layers (0.ltoreq.x1.ltoreq.1) and Al.sub.x2 Ga.sub.1-x2 As layers (0.ltoreq.x2.ltoreq.1) one after the other by turns. The second film is formed by piling up In.sub.x3 Ga.sub.1-x3 As.sub.y3 P.sub.1-y3 layers (0.ltoreq.x3, y3.ltoreq.1) and In.sub.x4 Ga.sub.1-x4 As.sub.y4 P.sub.1-y4 layers (0.ltoreq.x4, y4.ltoreq.1) one after the other by turns. The active layer is provided as an In.sub.x5 Ga.sub.1-x5 As.sub.y5 P.sub.1-y5 layer (0.ltoreq.x5, y5.ltoreq.1). The third film is formed by piling up In.sub.x6 Ga.sub.1-x6 AS.sub.y6 P.sub.1-y6 layers (0.ltoreq.x6, y6.ltoreq.1) and In.sub.x7 Ga.sub.1-x7 As.sub.y7 P.sub.1-y7 layers (0.ltoreq.x7, y7.ltoreq.1) one after the other by turns. The fourth film is formed by piling up Al.sub.x8 Ga.sub.1-x8 As layers (0.ltoreq.x8.ltoreq.1) and Al.sub.x9 Ga.sub.1-x9 As layers (0.ltoreq.x9.ltoreq.1) one after the other by turns. In each film, each layer has a thickness corresponding to a value obtained by dividing an emission wavelength by a refractive index and 4.

REFERENCES:
patent: 5206871 (1993-04-01), Deppe et al.
patent: 5341390 (1994-08-01), Yamada et al.
patent: 5343487 (1994-08-01), Scott et al.
patent: 5432809 (1995-07-01), Grodzinski et al.
patent: 5493577 (1996-02-01), Choquette et al.
patent: 5543638 (1996-08-01), Nettelbladt et al.
patent: 5588016 (1996-12-01), Otoma et al.
Basic et al. "Optically pumped all-epitaxial wafer-fused 1.52 um vertical-cavity laser", Electronic Letters, pp. 704-705, vol. 30, No. 9, Apr. 28,1994.
"Double-Fused 1.52.mu.m Vertical-Cavity Lasers", D. I. Babic and J. J. Dudley, Appl. Phys. Lett., vol. 66 (69), pp. 1030-1032, 27 Feb. 1995.
Patent Abstracts of Japan, vol. 018, No. 406 (E-1585), 28 Jul. 1994 & JP 06-120610 A (Nippon Telegr. & Teleph. Corp.), 28 Apr. 1994, Abstract.
Dubravko I. Babic et al: "Transverse-mode and polarization characteristics of double-fused 1.52/.mu.m vertical-cavity lasers" Proceedings of the International Conference on Indium Phosphide and Related Materials, Hokkaido, May 9-13, 1995, No. Conf. 7, 9 May 1995, Institute of Electrical and Electronics Engineers, pp. 773-776.
R. J. Ram et al: "Analysis of wafer fusing for 1.3.mu.m vertical cavity surface emitting lasers", Applied Physics Letters, vol. 62, No. 20, 17 May 1993 pp. 2474-2476.
Y. Ohiso et al: "1.55.mu.m vertical-cavity surface-emitting lasers with wafer-fused InGaAsP/InP-GaAs/AlAs DBRs", Electronics Letters, vol. 32, No. 16, 1 Aug. 1996, pp. 1483-1484.

Affiliated with

Also associated with

Rating

Vertical-cavity surface-emitting laser and method for manufactur does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical-cavity surface-emitting laser and method for manufactur, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical-cavity surface-emitting laser and method for manufactur will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1455703