Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Patent
1996-03-22
1998-05-19
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
372 45, 372 96, 372 99, H01L 3300
Patent
active
057539413
ABSTRACT:
A vertical cavity surface emitting laser (VCSEL) is provided which has a substrate, a first reflector layer formed on the substrate, an active layer formed on the first reflector layer, a second reflector layer formed on the active layer, and an electrode layer formed on the second reflector layer and having a cavity for emitting light from the second reflector layer. Laser light is generated in the active layer between the first and second reflective layers and is emitted through the second reflective layer at the cavity. The first and second reflective layers are each formed of semiconductor material containing impurities, such that the impurities in the first reflective layer are of an opposite type to the impurities in the second reflective layer. The electrode layer has a metal layer having a high electrical conductivity and a conductive auxiliary reflector layer formed between the metal layer and the second reflective layer. The auxiliary reflector layer has a reflectivity which is lower than the reflectivities of either of the first or second reflector layers.
REFERENCES:
patent: 5633527 (1997-05-01), Lear
Lee Yong-hee
Shin Hyun-kuk
Samsung Electronics Co,. Ltd.
Tran Minh-Loan
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