Vertical access transistor with curved channel

Details Vertical access transistor with curved channel Vertical access transistor with curved channel

2005-05-17

2005-05-17

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S328000, C257S329000, C257S330000

Reexamination Certificate

active

06894336

ABSTRACT:
An access transistor (140) for a vertical DRAM device (110) and method of forming thereof. Trenches (114) are formed in a semiconductor wafer substrate (112), and storage capacitors (118) are formed in the bottom portion of the trenches (114). The trenches (114) are curved in a channel (130) region formed in a top portion of the trenches (114). The channel (130) is curved about a central point c, and the channel extends into the substrate (112) by a distance d along a radius b. A gate oxide (126) is disposed adjacent the curved channel (130), and a gate conductor (128) is disposed adjacent the gate oxide (126).

REFERENCES:
patent: 4830978 (1989-05-01), Teng et al.
patent: 4901128 (1990-02-01), Sunami et al.
patent: 5225697 (1993-07-01), Malhi et al.
patent: 5404038 (1995-04-01), Morihara
patent: 6150688 (2000-11-01), Maeda et al.
patent: 6188096 (2001-02-01), Collins et al.
patent: 6320215 (2001-11-01), Bronner et al.
patent: 6426251 (2002-07-01), Bronner et al.
patent: 42 15 010 (1992-11-01), None
patent: 1 071 129 (2001-01-01), None

Affiliated with

Also associated with

Rating

Vertical access transistor with curved channel does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical access transistor with curved channel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical access transistor with curved channel will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3453561