Versatile system for integrated sense transistor

Details Versatile system for integrated sense transistor Versatile system for integrated sense transistor

2006-01-11

2009-06-30

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C438S257000

Reexamination Certificate

active

07554152

ABSTRACT:
The present invention provides a versatile system for producing sense transistors having optimized thermal and parametric matching with an associated power transistor. A power transistor is formed, having a plurality of alternating source and drain structures, with a plurality of gate structures interposed there between. At a desired location within the power transistor—which may be in a central location, or symmetrically distributed—one or more sense transistors are formed from an isolated portion of either a drain or source structure.

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S. Clemente et al., “An Introduction to the HEXSense Current-Sensing Device”, International Rectifier Power MOSFET Application Notes, 1986, pp. 1-6.

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