Versatile system for electrostatic discharge protection...

Details Versatile system for electrostatic discharge protection... Versatile system for electrostatic discharge protection...

2005-09-27

2005-09-27

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S536000

Reexamination Certificate

active

06949800

ABSTRACT:
The present invention provides a system for electrostatic discharge protection in a semiconductor device, utilizing a silicon-controlled rectifier (502). The system includes the silicon controlled rectifier, which has a first p-type region (508) coupled to a voltage node (504), a first n-type region (512) having a first side adjoining the first p-type region, a second p-type region (510) having a first side adjoining a second side of the first n-type region, and a second n-type region (514) having a first side adjoining a second side of the second p-type region. A clamping structure (506) is intercoupled between the second n-type region and ground, to prevent the junction between the second p-type region and the second n-type region from retaining a forward bias. A switching structure (518) is intercoupled between the second p-type region and ground to ground the second p-type region during normal operation of the semiconductor device.

REFERENCES:
patent: 6671153 (2003-12-01), Ker et al.

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