Versatile system for diffusion limiting void formation

Details Versatile system for diffusion limiting void formation Versatile system for diffusion limiting void formation

2006-04-25

2006-04-25

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

07033924

ABSTRACT:
Disclosed is apparatus and method for decreasing diffusive damage effects to a primary structure (406, 506) within a semiconductor device (400, 500). The device typically comprises a first interconnect (402, 502), and a second interconnect (404, 504). The primary structure is disposed between the first and second interconnects to electrically intercouple them. An active diffusion volume (410, 514) is determined, within which the primary structure is located. A buffer structure (408, 508) is disposed upon the first interconnect in proximity to the primary structure and adapted to buffer the primary via structure from diffusive voiding occurring at a contact point between the primary structure and the first interconnect.

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