Verifying a process margin of a mask pattern using...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C716S030000, C716S030000, C700S097000, C700S120000, C700S121000, C430S005000, C378S035000

Reexamination Certificate

active

07458058

ABSTRACT:
Verifying a process margin for a mask pattern includes receiving the mask pattern for patterning features on a semiconductor wafer. The mask pattern is modified according to a wafer pattern model operable to estimate a wafer pattern resulting from the mask pattern. An intermediate stage model is selected to apply to a portion of the mask pattern, where the intermediate stage model is operable to estimate an intermediate stage of the wafer pattern. A process margin of the portion is verified by selecting a test of the intermediate stage model, and performing the test on the portion to verify the process margin of the portion.

REFERENCES:
patent: 5539652 (1996-07-01), Tegethoff
patent: 5879844 (1999-03-01), Yamamoto et al.
patent: 6077310 (2000-06-01), Yamamoto et al.
patent: 6756168 (2004-06-01), Yu et al.
patent: 6813757 (2004-11-01), Aton et al.
patent: 6876894 (2005-04-01), Chen et al.
patent: 6934671 (2005-08-01), Bertsch et al.
patent: 6977517 (2005-12-01), Miao et al.
patent: 7019548 (2006-03-01), Miao et al.
patent: 7194325 (2007-03-01), Lee et al.
patent: 7243316 (2007-07-01), White et al.
patent: 7363099 (2008-04-01), Smith et al.
patent: 7367008 (2008-04-01), White et al.
patent: 7383521 (2008-06-01), Smith et al.
patent: 7395132 (2008-07-01), Prager et al.
patent: 7398508 (2008-07-01), Shi et al.
patent: 2003/0036270 (2003-02-01), Yu et al.
patent: 2003/0229410 (2003-12-01), Smith et al.
patent: 2004/0023422 (2004-02-01), Miao et al.
patent: 2005/0112997 (2005-05-01), Lin et al.
patent: 2005/0132306 (2005-06-01), Smith et al.
patent: 2005/0159835 (2005-07-01), Yamada et al.
patent: 2005/0172251 (2005-08-01), Change et al.
patent: 2005/0218925 (2005-10-01), Miao et al.
patent: 2005/0251771 (2005-11-01), Robles
patent: 2005/0256601 (2005-11-01), Lee et al.
patent: 2006/0150129 (2006-07-01), Chiu et al.
patent: 2006/0206853 (2006-09-01), Kamo et al.
patent: 2006/0236297 (2006-10-01), Melvin et al.
patent: 2006/0266243 (2006-11-01), Percin et al.
patent: 2008/0216027 (2008-09-01), White et al.
patent: 2008/0228306 (2008-09-01), Yetter et al.
patent: 2004061720 (2004-02-01), None
Erhardt et al., “A Defect-toYield Correlation Study for Marginally Printing Reticle Defects in the Manufacture of a 16 Mb Flash Memory Device”, 2000 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, Sep. 12-14, 2000, pp. 96-102.
Qian et al., “Advanced Physical Models for Mask Data Verification and Impacts on Physical Layout Synthesis”, Proceedings of Fourth International Symposium on Quality Electronic Design, Mar. 24-26, 2003, pp. 125-130.
Stine et al., “Rapid Characterization and Modeling of Pattern-Dependent Variation Chemical-Mechanical Polishing”, IEEE Transactions on Semiconductor Manufacturing, vol. 11, No. 1, Feb. 1998, pp. 129-140.
UMC and Synopsys Develop Reference Flow for UMC's Advanced Deep Submicron Processes, Collaboration Validates Synopsys' Galaxy Design Platform for UMC's 0.13 micron Process, Synopsys, Inc., Corporate, Copyright © 2005 Synopsys, Inc., http://www.synopsys.com, 2 pages, May 3, 2004.
TSMC and Synopsys Address Design Challenges for 90 Nanometer and Below with TSMC Reference Flow 5.0, Synopsys, Inc., Corporate, Copyright © 2005 Synopsys, Inc., http://www.synopsys.com, 3 pages, Jun. 7, 2004.
Hercules Physical Verification Suite (PVS) The Industry's Fastest Physical Verification Solution, Synopsys, Inc., Products & Solutions, Copyright © 2005 Synopsys, Inc., http://www.synopsys.com, 4 pages, Jan. 6, 2005.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Verifying a process margin of a mask pattern using... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Verifying a process margin of a mask pattern using..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Verifying a process margin of a mask pattern using... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4047586

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.