VDMOS transistor with reduced projective area of source region

Details VDMOS transistor with reduced projective area of source region VDMOS transistor with reduced projective area of source region

1994-07-01

1995-09-19

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257339, 257401, H01L 2976, H01L 2994

Patent

active

054518059

ABSTRACT:
Reduced-size VDMOS transistor having reduced leakage and a reduced propensity to latch-up. The VDMOS transistor has a reduced vertical projective area of the source region.

REFERENCES:
patent: 4561168 (1985-12-01), Pitzer et al.

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