Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-02-17
1995-07-04
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257336, 257339, 257341, 257343, 257345, 257402, H01L 2968
Patent
active
054303168
ABSTRACT:
The breakdown voltage of a VDMOS transistor is markedly increased without depressing other electrical characteristics of the device by tying the potential of a field-isolation diffusion, formed under the edge portion of a strip of field oxide separating a matrix of source cells from a drain diffusion, to the source potential of the transistor. This may be achieved by extending a body region of a peripheral source cell every given number of peripheral cells facing the strip of field-isolation structure until it intersects said field-isolation diffusion. By so connecting one peripheral source cell every given number of cells, the actual decrement of the overall channel width of the integrated transistor is negligible, thus leaving unaltered the electrical characteristics of the power transistor.
REFERENCES:
patent: 5034790 (1991-07-01), Mukherjee
Patent Abstracts of Japan, vol. 015, No. 387 (E-1117), JP-A-3155167 (Sanyo Electric Co. Ltd.), Sep. 30, 1991.
Patent Abstracts of Japan, vol. 005, No. 181 (E-083), JP-A-56110264 (OKI Electric Ind. Co. Ltd.), Nov. 20, 1981.
Patent Abstracts of Japan, vol. 010, No. 113 (E-399), JP-A-60249367 (Hitachi Seisakusho KK), Apr. 26, 1986.
Ishikawa, et al., "A 2.45 GHz Power LD-MOSFET with Reduced Source Inductance by V-Groove Connections", Technical Digest of the International Electron Devices Meeting, Dec. 1-4, 1985, pp. 166-169.
Contiero Claudio
Galbiati Paola
Zullino Lucia
Formby Betty
Groover Robert
SGS-Thomson Microeletronics S.r.l.
Wojciechowicz Edward
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