VDMOS transistor and manufacturing method therefor

Details VDMOS transistor and manufacturing method therefor VDMOS transistor and manufacturing method therefor

1994-10-28

1995-08-15

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257332, 257333, 257335, 257336, 257345, H01L 2968

Patent

active

054422140

ABSTRACT:
A VDMOS transistor having a reduced drain/source resistance without a corresponding decrease in breakdown voltage and a manufacturing method therefor. Such a VDMOS transistor is created by gradually increasing the doping density of the transistor's implanted regions, while simultaneously increasing the respective thicknesses of the gate oxide layers corresponding to the implanted regions along the current flow path.

REFERENCES:
patent: 5298781 (1994-03-01), Cogan et al.

Affiliated with

Also associated with

Rating

VDMOS transistor and manufacturing method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with VDMOS transistor and manufacturing method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and VDMOS transistor and manufacturing method therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2184003