Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-04-30
1996-07-30
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257130, 257138, 257341, 257343, 257339, H01L 2976, H01L 2974, H01L 2994, H01L 31062
Patent
active
055414303
ABSTRACT:
In a semiconductor device having a low ON resistance, an n.sup.- -type epitaxial layer (1) is formed on an upper surface of an n.sup.+ -type substrate (8) and p-type diffusion regions (2) are selectively formed on its upper surface, while n-type diffusion regions (3) are further formed on upper surfaces thereof. A gate electrode (5) wrapped up in an oxide film (4) is provided on the upper surface of the n.sup.- -type epitaxial layer (1) and above portions of the p-type diffusion regions (2) held between the n.sup.- -type epitaxial layer (1) and the n.sup.+ -type diffusion regions (3). Grooves (9) are formed in the upper surface of the n.sup.- -type epitaxial layer (1) located under a gate electrode (5) to extend perpendicularly to junction planes between the n.sup.- -type epitaxial layer (1) and the p-type diffusion regions (2). While an ON resistance includes an accumulation resistance (Ra) and a JFET resistance (Rj), these resistances can be reduced since a gate width is increased due to formation of the grooves (9) and a current readily flows downwardly along the grooves (9).
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Loke Steven H.
Mitsubishi Denki & Kabushiki Kaisha
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