Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-08-22
2006-08-22
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189070, C365S189110
Reexamination Certificate
active
07095659
ABSTRACT:
Static random access memory (SRAM) performance is enhanced through the use of appropriate latch strength control. For example, latch strength in an SRAM cell is increased during data store operations to reduce power dissipation and improve reliability. Latch strength can also be increased to improve read speed, while latch strength can be reduced to improve write speed. In an SRAM cell including at least a negative differential resistance (NDR) device as a pull-up element, this type of latch control can be achieved through appropriate biasing of the NDR device(s). For example, drain-to-source bias can be increased or decreased to increase or decrease, respectively, latch strength. Similarly, gate-to-source bias can be increased or decreased to increase or decrease, respectively, latch strength.
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Bever Hoffman & Harms LLP
Elms Richard
Harms Jeanette S.
Nguyen Hien N
Progressant Technologies, Inc.
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