Variable threshold voltage DRAM cell

Details Variable threshold voltage DRAM cell Variable threshold voltage DRAM cell

1999-09-09

2000-05-30

Tran, Andrew Q.

Static information storage and retrieval

Systems using particular element

Capacitors

365145, 257297, 257300, 257302, 257303, 257306, 257295, G11C 1124

Patent

active

060698195

ABSTRACT:
A memory cell is provided that includes a transistor and a capacitor. The transistor has a gate, a drain, a source, and a back-plane gate, and the capacitor has first and second electrodes. The back-plane gate of the transistor is connected to the first electrode of the capacitor. In a preferred embodiment, the source of the transistor is also connected to the first electrode of the capacitor. Additionally, a memory cell is provided that includes a transistor and a capacitor. The transistor has a gate, a drain, a source, and a back-plane gate, and the capacitor has first and second electrodes. The first electrode of the capacitor is connected to the source of the transistor, and the back-plane gate changes the threshold voltage of the transistor in correspondence to charge stored on the capacitor. In one preferred embodiment, the back-plane gate is charged from the transistor by a tunneling process.

REFERENCES:
patent: 4704705 (1987-11-01), Womack
patent: 5978294 (1999-11-01), Ueno et al.

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