Variable threshold voltage complementary MOSFET with SOI...

Details Variable threshold voltage complementary MOSFET with SOI... Variable threshold voltage complementary MOSFET with SOI...

2005-04-05

2005-04-05

Thai, Luan (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S348000, C257S349000, C257S351000, C257S638000

Reexamination Certificate

active

06876039

ABSTRACT:
The dependency of threshold voltage on adjusted bias voltage is varied between N-channel and P-channel MOSFETs. A support substrate, an insulating layer on the support substrate, and island-shaped first and second silicon layers separately formed on the insulating layer; a first MOSFET formed of a fully depleted SOI where a first channel part is formed in a first silicon layer; and a second MOSFET formed of a partially depleted SOI where a second channel part is formed in a second silicon layer, the second MOSFET configures a complementary MOSFET with the first MOSFET, are provided. The threshold voltage of the second MOSFET formed of the partially depleted SOI is hardly varied because of a neutral region in the second channel part, although bias voltage is applied to the support substrate to vary the threshold voltage of the first MOSFET formed of the fully depleted SOI.

REFERENCES:
patent: 6537891 (2003-03-01), Dennison et al.
patent: 2000-124345 (2000-04-01), None

Affiliated with

Also associated with

Rating

Variable threshold voltage complementary MOSFET with SOI... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Variable threshold voltage complementary MOSFET with SOI..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Variable threshold voltage complementary MOSFET with SOI... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3427166