Variable threshold trench IGBT with offset emitter contacts

Details Variable threshold trench IGBT with offset emitter contacts Variable threshold trench IGBT with offset emitter contacts

2008-10-16

2011-11-29

Landau, Matthew (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S397000, C257SE29066, C257SE29198

Reexamination Certificate

active

08067797

ABSTRACT:
A trench type IGBT as disclosed herein includes a plurality of channel regions having one threshold voltage for the normal operation of the device and a plurality of channel regions having a threshold voltage higher than the threshold voltage for the normal operation of the device.

REFERENCES:
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patent: 6072214 (2000-06-01), Herzer et al.
patent: 6683331 (2004-01-01), Francis
patent: 6861702 (2005-03-01), Kitamura
patent: 7619280 (2009-11-01), Cao et al.
patent: 2002/0020873 (2002-02-01), Klodzinski
patent: 2004/0178441 (2004-09-01), Yanagisawa
patent: 2004/0232481 (2004-11-01), Herrick et al.
patent: 2005/0006700 (2005-01-01), Cao
patent: 2007/0063269 (2007-03-01), Ng
patent: 2008/0087952 (2008-04-01), Pfirsch
patent: 2009/0008674 (2009-01-01), Udrea
International Search Report dated Dec. 22, 2008.

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