Variable threshold device memory circuit having automatic refres

Details Variable threshold device memory circuit having automatic refres Variable threshold device memory circuit having automatic refres

1977-09-26

1979-04-10

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

Data refresh

365184, G11C 700, G11C 1140

Patent

active

041492706

ABSTRACT:
An MNOS non-volatile memory circuit, which inhibits the application of a write voltage to a memory cell at times when the write data is the same as the data stored in such cell to prevent saturation of the transistor, includes provision for applying automatically such a write voltage upon the detection of a predetermined weak storage condition in such cell.

REFERENCES:
patent: 3801965 (1974-04-01), Keller et al.
patent: 3836894 (1974-09-01), Cricchi
patent: 4037243 (1977-07-01), Hoffman et al.
patent: 4044343 (1977-08-01), Uchida
patent: 4055837 (1977-10-01), Stein et al.

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