Variable sense level for fuse-based non-volatile memory

Details Variable sense level for fuse-based non-volatile memory Variable sense level for fuse-based non-volatile memory

2007-10-30

2010-06-22

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S103000, C365S207000, C365S208000, C365S210110

Reexamination Certificate

active

07742352

ABSTRACT:
Techniques for use with a fuse-based non-volatile memory circuit include digitally controlling a resistance threshold of the circuit. The circuit includes a fuse circuit and a comparator circuit. The comparator circuit is configured to compare a first signal indicative of the fuse resistance to a second signal indicative of a reference level. At least one of the first and second signals is digitally controllable. The comparator circuit is configured to generate a digital output signal indicative of the comparison. The circuit may include a first digital-to-analog converter circuit configured to generate a first analog signal based on at least a first plurality of digital signals. The first signal is at least partially based on the first analog signal. The circuit may include a control circuit configured to digitally control the digitally controllable ones of the first and second signals at least partially based on the digital output signal.

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