Electrical resistors – Resistance value responsive to a condition – Current and/or voltage
Reexamination Certificate
2011-07-12
2011-07-12
Lee, Kyung (Department: 2833)
Electrical resistors
Resistance value responsive to a condition
Current and/or voltage
C365S148000
Reexamination Certificate
active
07978047
ABSTRACT:
A variable resistance element comprises a variable resistor of strongly-correlated material sandwiched between two metal electrodes, and the electric resistance between the metal electrodes varies when a voltage pulse is applied between the metal electrodes. Such a switching operation as the ratio of electric resistance between low and high resistance states is high can be attained by designing the metal electrodes and variable resistor appropriately based on a definite switching operation principle. Material and composition of the first electrode and variable resistor are set such that metal insulator transition takes place on the interface of the first electrode in any one of two metal electrodes and the variable resistor by applying a voltage pulse. Two-phase coexisting phase of metal and insulator phases can be formed in the vicinity of the interface between the variable resistor and first electrode by the work function difference between the first electrode and variable resistor.
REFERENCES:
patent: 6204139 (2001-03-01), Liu et al.
patent: 2004/0121074 (2004-06-01), Zhuang et al.
patent: 2005/0151156 (2005-07-01), Wu et al.
patent: 2004-204348 (2004-07-01), None
patent: 2006-120701 (2006-05-01), None
patent: 2006-196566 (2006-07-01), None
International Search Report for PCT/JP2006/315649 mailed Oct. 3, 2006.
Sawa et al., “Hysteric current-voltage characteristic and resistance switching at a rectifying Ti/Pr0.7Ca0.3MnO3 interface”Applied Physics Letter, vol. 85, No. 18, Nov. 2004, pp. 4073-4075.
Zhuang et al., Novell Colossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory (RRAM).
Kotliar et al., “Compressibility Divergence and the Finite Temperature Mott Transition”,Physical Review Letters, vol. 89, No. 4, Jul. 2002, pp. 1-4.
Imada et al., “Metal-insulator transitions”,Reviews of Modern Physics, vol. 70, No. 4, Oct. 1998, pp. 1143-1263.
Dearnley et al., “Electrical phenomena in amorphous oxide films”,Rep. Prog. Phys., 1970, pp. 1129-1191.
Hosoi Yasunari
Nagaosa Naoto
Ogimoto Yasushi
Ohnishi Shigeo
Oka Takashi
Lee Kyung
National Science and Technology
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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