Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-05-03
2011-05-03
Lam, David (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S171000, C365S173000, C365S158000
Reexamination Certificate
active
07936583
ABSTRACT:
Variable resistive punchthrough access methods are described. The methods include switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the magnetic tunnel junction data cell in a first direction. The write current is provided by a transistor being electrically coupled to the variable resistive data cell and a source line. The write current passes through the transistor in punchthrough mode.
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Carter Andrew John Gjevre
Khoury Maroun Georges
Lee Brian
Liu Hongyue
Campbell Nelson Whipps LLC
Lam David
Seagate Technology LLC
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