Variable resistive memory punchthrough access method

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S203000, C365S158000, C365S163000

Reexamination Certificate

active

07961497

ABSTRACT:
Variable resistive punchthrough access methods are described. The methods include switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the magnetic tunnel junction data cell in a first direction. The write current is provided by a transistor being electrically coupled to the variable resistive data cell and a source line. The write current passes through the transistor in punchthrough mode.

REFERENCES:
patent: 3982233 (1976-09-01), Crookshanks
patent: 3982235 (1976-09-01), Bennett
patent: 4160988 (1979-07-01), Russell
patent: 4232057 (1980-11-01), Ray
patent: 4247915 (1981-01-01), Bartlett
patent: 4323589 (1982-04-01), Ray
patent: 4576829 (1986-03-01), Kaganowicz
patent: 5083190 (1992-01-01), Pfiester
patent: 5135878 (1992-08-01), Bartur
patent: 5278636 (1994-01-01), Williams
patent: 5330935 (1994-07-01), Dobuzinsky
patent: 5365083 (1994-11-01), Tada
patent: 5412246 (1995-05-01), Dobuzinsky
patent: 5443863 (1995-08-01), Neely
patent: 5580804 (1996-12-01), Joh
patent: 5614430 (1997-03-01), Liang
patent: 5739564 (1998-04-01), Kosa
patent: 5872052 (1999-02-01), Iyer
patent: 5913149 (1999-06-01), Thakur
patent: 5923948 (1999-07-01), Cathey, Jr.
patent: 5926412 (1999-07-01), Evans
patent: 5929477 (1999-07-01), McAllister
patent: 6011281 (2000-01-01), Nunokawa
patent: 6013548 (2000-01-01), Burns
patent: 6034389 (2000-03-01), Burns
patent: 6077745 (2000-06-01), Burns
patent: 6100166 (2000-08-01), Sakaguchi
patent: 6114211 (2000-09-01), Fulford
patent: 6121642 (2000-09-01), Newns
patent: 6121654 (2000-09-01), Likharev
patent: 6165834 (2000-12-01), Agarwal
patent: 6300205 (2001-10-01), Fulford
patent: 6341085 (2002-01-01), Yamagami
patent: 6346477 (2002-02-01), Kaloyeros
patent: 6376332 (2002-04-01), Yankagita
patent: 6448840 (2002-09-01), Kao
patent: 6534382 (2003-03-01), Sakaguchi
patent: 6617642 (2003-09-01), Georgesca
patent: 6624463 (2003-09-01), Kim
patent: 6653704 (2003-11-01), Gurney
patent: 6667900 (2003-12-01), Lowrey
patent: 6724025 (2004-04-01), Takashima
patent: 6750540 (2004-06-01), Kim
patent: 6753561 (2004-06-01), Rinerson
patent: 6757842 (2004-06-01), Harari
patent: 6781176 (2004-08-01), Ramesh
patent: 6789689 (2004-09-01), Beale
patent: 6800897 (2004-10-01), Baliga
patent: 6842368 (2005-01-01), Hayakawa
patent: 6917539 (2005-07-01), Rinerson
patent: 6940742 (2005-09-01), Yamamura
patent: 6944052 (2005-09-01), Subramanian
patent: 6979863 (2005-12-01), Ryu
patent: 7009877 (2006-03-01), Huai
patent: 7045840 (2006-05-01), Tamai
patent: 7051941 (2006-05-01), Yui
patent: 7052941 (2006-05-01), Lee
patent: 7098494 (2006-08-01), Pakala
patent: 7130209 (2006-10-01), Reggiori
patent: 7161861 (2007-01-01), Gogl
patent: 7180140 (2007-02-01), Brisbin
patent: 7187577 (2007-03-01), Wang
patent: 7190616 (2007-03-01), Forbes
patent: 7200036 (2007-04-01), Bessho
patent: 7215568 (2007-05-01), Liaw
patent: 7218550 (2007-05-01), Schwabe
patent: 7224601 (2007-05-01), Panchula
patent: 7233537 (2007-06-01), Tanizaki
patent: 7236394 (2007-06-01), Chen
patent: 7247570 (2007-07-01), Thomas
patent: 7272034 (2007-09-01), Chen
patent: 7272035 (2007-09-01), Chen
patent: 7273638 (2007-09-01), Belyansky
patent: 7274067 (2007-09-01), Forbes
patent: 7282755 (2007-10-01), Pakala
patent: 7285812 (2007-10-01), Tang
patent: 7286395 (2007-10-01), Chen
patent: 7289356 (2007-10-01), Diao
patent: 7345912 (2008-03-01), Luo
patent: 7362618 (2008-04-01), Harari
patent: 7378702 (2008-05-01), Lee
patent: 7379327 (2008-05-01), Chen
patent: 7381595 (2008-06-01), Joshi
patent: 7382024 (2008-06-01), Ito
patent: 7397713 (2008-07-01), Harari
patent: 7413480 (2008-08-01), Thomas
patent: 7414908 (2008-08-01), Miyatake
patent: 7416929 (2008-08-01), Mazzola
patent: 7432574 (2008-10-01), Nakamura
patent: 7440317 (2008-10-01), Bhattacharyya
patent: 7443710 (2008-10-01), Fang
patent: 7465983 (2008-12-01), Eldridge
patent: 7470142 (2008-12-01), Lee
patent: 7470598 (2008-12-01), Lee
patent: 7502249 (2009-03-01), Ding
patent: 7515457 (2009-04-01), Chen
patent: 7529114 (2009-05-01), Asao
patent: 7542356 (2009-06-01), Lee
patent: 7646629 (2010-01-01), Hamberg
patent: 7660148 (2010-02-01), Yokoi
patent: 7697322 (2010-04-01), Leuschner
patent: 7738279 (2010-06-01), Siesazeck
patent: 7738881 (2010-06-01), Krumm
patent: 7869257 (2011-01-01), Philipp
patent: 2002/0081822 (2002-06-01), Yanageta
patent: 2002/0136047 (2002-09-01), Scheuerlein
patent: 2003/0045064 (2003-03-01), Kunikiyo
patent: 2003/0168684 (2003-09-01), Pan
patent: 2004/0084725 (2004-05-01), Nishiwaki
patent: 2004/0114413 (2004-06-01), Parkinson
patent: 2004/0114438 (2004-06-01), Morimoto
patent: 2004/0257878 (2004-12-01), Morikawa
patent: 2004/0262635 (2004-12-01), Lee
patent: 2005/0044703 (2005-03-01), Liu
patent: 2005/0092526 (2005-05-01), Fielder
patent: 2005/0122768 (2005-06-01), Fukumoto
patent: 2005/0145947 (2005-07-01), Russ
patent: 2005/0218521 (2005-10-01), Lee
patent: 2005/0253143 (2005-11-01), Takaura
patent: 2005/0280042 (2005-12-01), Lee
patent: 2005/0280061 (2005-12-01), Lee
patent: 2005/0280154 (2005-12-01), Lee
patent: 2005/0280155 (2005-12-01), Lee
patent: 2005/0280156 (2005-12-01), Lee
patent: 2005/0282356 (2005-12-01), Lee
patent: 2006/0073652 (2006-04-01), Pellizzer
patent: 2006/0131554 (2006-06-01), Joung
patent: 2006/0275962 (2006-12-01), Lee
patent: 2007/0007536 (2007-01-01), Hidaka
patent: 2007/0077694 (2007-04-01), Lee
patent: 2007/0105241 (2007-05-01), Leuschner
patent: 2007/0113884 (2007-05-01), Kensey
patent: 2007/0115749 (2007-05-01), Gilbert
patent: 2007/0253245 (2007-11-01), Ranjan
patent: 2007/0279968 (2007-12-01), Luo
patent: 2007/0281439 (2007-12-01), Bedell
patent: 2007/0297223 (2007-12-01), Chen
patent: 2008/0007993 (2008-01-01), Saitoh
patent: 2008/0029782 (2008-02-01), Carpenter
patent: 2008/0032463 (2008-02-01), Lee
patent: 2008/0037314 (2008-02-01), Ueda
patent: 2008/0038902 (2008-02-01), Lee
patent: 2008/0048327 (2008-02-01), Lee
patent: 2008/0094873 (2008-04-01), Lai
patent: 2008/0108212 (2008-05-01), Moss
patent: 2008/0144355 (2008-06-01), Boeve
patent: 2008/0170432 (2008-07-01), Asao
patent: 2008/0191312 (2008-08-01), Oh
patent: 2008/0261380 (2008-10-01), Lee
patent: 2008/0265360 (2008-10-01), Lee
patent: 2008/0273380 (2008-11-01), Diao
patent: 2008/0310213 (2008-12-01), Chen
patent: 2008/0310219 (2008-12-01), Chen
patent: 2009/0014719 (2009-01-01), Shimizu
patent: 2009/0040855 (2009-02-01), Luo
patent: 2009/0052225 (2009-02-01), Morimoto
patent: 2009/0072246 (2009-03-01), Genrikh
patent: 2009/0072279 (2009-03-01), Moselund
patent: 2009/0161408 (2009-06-01), Tanigami
patent: 2009/0162979 (2009-06-01), Yang
patent: 2009/0185410 (2009-07-01), Huai
patent: 2009/0296449 (2009-12-01), Slesazeck
patent: 2010/0007344 (2010-01-01), Guo
patent: 2010/0067281 (2010-03-01), Xi
patent: 2010/0078620 (2010-04-01), Xi et al.
patent: 2010/0110756 (2010-05-01), Khoury
patent: 2010/0142256 (2010-06-01), Kumar
patent: 2010/0149856 (2010-06-01), Tang
patent: 2011/0026307 (2011-02-01), Khoury
patent: 102008026432 (2009-12-01), None
patent: 1329895 (2003-07-01), None
patent: 0062346 (2000-10-01), None
patent: 0215277 (2002-02-01), None
patent: 2005/124787 (2005-12-01), None
patent: 2006/100657 (2006-09-01), None
patent: 2007/100626 (2007-09-01), None
patent: 2007/128738 (2007-11-01), None
Adee, S., “Quantum Tunneling Creates Fast Lane for Wireless”, IEEE Spectrum, Oct. 2007.
Berger et al., Merged-Transitor Logic (MTL)—A Low-Cost Bipolar Logic Concept, Solid-State Circuits, IEEE Journal, vol. 7, Issue 5, pp. 340-346 (2003).
Chung et al., A New SOI Inverter for Low Power Applications, Proceedings 1996 IEEE International SOI Conference, Oct. 1996.
Giacomini, R., et al., Modeling Silicon on Insulator MOS Transistors with Nonrectangular-Gate Layouts, Journal of the Electrochemical Society, 2006, pp. G218-G222, vol. 153, No. 3.
Hosomi et al., A Novel Nonvolatile Memory with Spin Torque Transfer Magnetization Switching: Spin-RAM, 2005 IEEE.
Hwang et al., Degradation of MOSFET's Drive Current Due to Halo Ion Implantation, Electron Devices Meeting, 1996, Internati

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Variable resistive memory punchthrough access method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Variable resistive memory punchthrough access method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Variable resistive memory punchthrough access method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2665362

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.