Variable resistive memory

Details Variable resistive memory Variable resistive memory

2011-08-23

2011-08-23

Elms, Richard (Department: 2824)

Static information storage and retrieval

Addressing

C365S148000, C365S158000, C365S163000, C365S185130, C365S230030

Reexamination Certificate

active

08004925

ABSTRACT:
A variable resistive memory device includes memory sectors, memory cells in each of the memory sectors, sub-wordlines including a first in signal communication with at least a first pair of the memory cells in a first sector and a second in signal communication with at least a second pair of the memory cells in a second sector, local bitlines where each is in signal communication a memory cell, a local bitline selecting signal generator in signal communication with local bitline selecting signal paths, a first local bitline selecting signal path in signal communication with a first pair of the local bitlines, and a second local bitline selecting signal path in signal communication with a second pair of the plurality of local bitlines, where a first of the first pair of local bitlines is in signal communication with a first of the first pair of the memory cells in the first sector and a second of the first pair of local bitlines is in signal communication with a second of the second pair of the memory cells in the second sector, and a first of the second pair of local bitlines is in signal communication with a second of the first pair of the memory cells in the first sector and a second of the second pair of local bitlines is in signal communication with a first of the second pair of the memory cells in the second sector.

REFERENCES:
patent: 6456521 (2002-09-01), Hsu et al.
patent: 6493284 (2002-12-01), Kim
patent: 7016214 (2006-03-01), Kawamata et al.

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